Tensile stress variations of chemically etched GaAs films grown on Si substrates
Photoluminescence (PL) at 77 K is used to study tensile stress variations in chemically etched stripes of a 3-..mu..m-thick GaAs film grown on Si substrate. The etched patterns consist of 1-mm-long stripes with widths ranging from 100 to 4 ..mu..m and 4 ..mu..m by 4 ..mu..m squares. We observed monotonic shift of PL peaks towards shorter wavelength for decreasing stripe width. In particular, when the width of the stripe is less than 7 ..mu..m, tensile stress is essentially uniaxial as evident from the magnitude of shift in PL peaks. The polarization characteristics of the PL spectra of these uniaxially stressed stripes are investigated and found to agree well with theoretical predictions.
- Research Organization:
- Department of Electrical Engineering and Computer Sciences and Electronics Research Laboratory, University of California, Berkeley, California 94720
- OSTI ID:
- 6710673
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:24; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
DATA
DIMENSIONS
ELEMENTS
EPITAXY
ETCHING
EXPERIMENTAL DATA
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LUMINESCENCE
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
PHOTOLUMINESCENCE
PNICTIDES
POLARIZATION
SEMIMETALS
SILICON
STRESSES
SURFACE FINISHING
THICKNESS