Characterization of GaAs film grown on Si substrate by photoluminescence at 77 K

Journal Article · Sun Feb 14 23:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99371· OSTI ID:5677982

Huang, Y; Yu, P Y; Lee, H; Wang, S

Photoluminescence of GaAs films grown on Si substrate has been investigated quantitatively at 77 K. The peak shift and splitting of the exciton luminescence are shown to result from tensile stress in the film. Information on carrier lifetime has been deduced from the line shape of the photoluminescence.

• Research Organization: Department of Physics, University of California, and Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
• OSTI ID: 5677982
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:7; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CARRIER LIFETIME
DATA
ELEMENTS
EXCITONS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LIFETIME
LUMINESCENCE
MECHANICAL PROPERTIES
MEDIUM TEMPERATURE
NUMERICAL DATA
PHOTOLUMINESCENCE
PNICTIDES
QUASI PARTICLES
SEMIMETALS
SILICON
STRESSES
TENSILE PROPERTIES