Characterization of GaAs grown on Si epitaxial layers on GaAs substrates

Journal Article · Mon Dec 31 23:00:00 EST 1990 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.347754· OSTI ID:5998207

Adomi, K; Strite, S; Morkoc, H ^[1]; Nakamura, Y; Otsuka, N ^[2]

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1. Coordinated Science Laboratory Materials Research Laboratory, University of Illinois at Urbana-Champaign, 1101 W. Springfield Avenue, Urbana, Illinois 61801 (US)
2. School of Materials Engineering, Purdue University, West Lafayette, Indiana 47904 (US)

GaAs has been grown on 9 and 18 A thicknesses of epitaxial Si which was grown on GaAs (100) substrates. The GaAs on Si interface was characterized by cross-sectional transmission electron microscopy. A 9 A thickness of Si on GaAs is pseudomorphic while 18 A of Si is relaxed. Antiphase domains (APDs) were observed to annihilate near the GaAs on Si interface. Annihilation ocurred within 100 A of the interface for the 9 A thickness of Si and around 1500 A for the 18-A Si case. From a detailed analysis of the APD shapes and sizes, we deduce that GaGa bonds are energetically favored in the {l brace}111{r brace} planes and that two separate APD annihilation mechanisms occur. The growth mode of epitaxial Si on GaAs was also studied by {ital in} {ital situ} high-energy electron diffraction.

• DOE Contract Number: AC02-76ER01198
• OSTI ID: 5998207
• Journal Information: Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 69:1; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
CRYSTAL STRUCTURE
DIFFRACTION
DOMAIN STRUCTURE
ELECTRON DIFFRACTION
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LAYERS
MICROSCOPY
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
MORPHOLOGY
PNICTIDES
SCATTERING
SEMIMETALS
SILICON
TRANSMISSION ELECTRON MICROSCOPY