Antiphase-domain-free GaAs grown on pseudomorphic Si (100) surfaces by molecular beam epitaxy

Journal Article · Sun Jan 28 23:00:00 EST 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102768· OSTI ID:7004876

Adomi, K; Strite, S; Morkoc, H ^[1]

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1. Coordinated Science Laboratory and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 1101 West Springfield Avenue, Urbana, Illinois 61801 (US)

GaAs has been grown on pseudomorphic Si (100) surfaces and (100) surfaces misoriented 4{degree} toward (011) and (001) in order to study the quality of the GaAs on Si interface in the absence of misfit dislocations. We obtain completely two-dimensional single-domain GaAs epitaxy after only 80 A of deposition as observed by {ital in} {ital situ} high-energy electron diffraction. Transmission electron microscopy verifies that the GaAs grown on pseudomorphic Si is free of antiphase domains and other notable defects.

• DOE Contract Number: AC02-76ER01198
• OSTI ID: 7004876
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:5; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DISLOCATIONS
ELEMENTS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
INTERFACES
LINE DEFECTS
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
NUCLEATION
PNICTIDES
SEMIMETALS
SILICON