Structural properties of GaAs on (001) oriented Si and Ge substrates
A detailed x-ray scattering study of GaAs grown by molecular beam epitaxy on (001) oriented Si and Ge substrates is reported. It is shown that the broadening of the GaAs Bragg peaks can be understood in terms of residual strains for samples 2 ..mu..m thick. For a sample 0.2 ..mu..m thick, domain size broadening effects corresponding to the total thickness of the GaAs film must also be included in order to explain the peak widths. In none of the samples was any evidence of antiphase domain broadening observed and we are thus able to place a minimum of 4000 A on the size of any possible antiphase domains. We also find that the GaAs lattice is incommensurate with the Si substrate and that the GaAs is tetragonally distorted at room temperature. This distortion is explained by the difference in the thermal expansion of GaAs and Si.
- Research Organization:
- Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
- DOE Contract Number:
- AC02-76ER01198
- OSTI ID:
- 6774868
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 61:3; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360602* -- Other Materials-- Structure & Phase Studies
ARSENIC COMPOUNDS
ARSENIDES
COATINGS
CRYSTAL STRUCTURE
DIMENSIONS
DOMAIN STRUCTURE
ELEMENTS
EPITAXY
EXPANSION
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GERMANIUM
LINE BROADENING
METALS
MOLECULAR BEAM EPITAXY
PNICTIDES
SEMIMETALS
SILICON
STRAINS
THERMAL EXPANSION
THICKNESS
THIN FILMS
VAPOR DEPOSITED COATINGS