Stress variations and relief in patterned GaAs grown on mismatched substrates

Journal Article · Sun Feb 14 23:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99415· OSTI ID:5677990

Yacobi, B G; Jagannath, C; Zemon, S; Sheldon, P

Cathodoluminescence scanning electron microscopy studies reveal significant variations in stress across etched patterns of GaAs grown on both InP and Si substrates. The stress in the epilayer is relieved at convex corners and in patterned areas with dimensions on the order of 10 ..mu..m. The stress is uniaxial near the edge of a patterned region and changes to biaxial away from the edge, producing nonuniformities in the optical properties of patterned regions.

• Research Organization: GTE Laboratories, Waltham, Massachusetts 02254
• OSTI ID: 5677990
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 52:7; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CATHODOLUMINESCENCE
ELEMENTS
ETCHING
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LAYERS
LUMINESCENCE
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMIMETALS
SILICON
STRESSES
SURFACE FINISHING
SURFACES
THIN FILMS