Infrared photoluminescence of InAs epilayers grown on GaAs and Si substrates

Journal Article · Mon May 15 00:00:00 EDT 1989 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.343339· OSTI ID:6153902

Grober, R D; Drew, H D; Chyi, J; Kalem, S; Morkoc, H

pWe report the results of infrared photoluminescence and optical transmission measurements of InAs epilayers grown on both Si and GaAs substrates. Photoluminescence reveals four well-defined peaks associated with band-to-band transitions and impurity/defect associated transitions. The spectra of the epilayers grown on Si are red shifted by roughly 15 meV relative to that of the epilayers grown on GaAs. In addition, optical transmission measurements reveal two intrinsic absorption edges for the epilayers grown on Si. These data are interpreted in terms of biaxial strain induced between the epilayer and the substrate due to differing indices of linear thermal expansion.

• Research Organization: Joint Program for Advanced Electronic Materials, Department of Physics and Astronomy, University of Maryland, College Park, Maryland 20742 and Laboratory for Physical Sciences, College Park, Maryland 20740
• OSTI ID: 6153902
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 65:10; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360104* -- Metals & Alloys-- Physical Properties
ARSENIC COMPOUNDS
ARSENIDES
COATINGS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTROMAGNETIC RADIATION
ELECTRONIC STRUCTURE
ELEMENTS
ENERGY SPECTRA
ENERGY-LEVEL TRANSITIONS
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IMPURITIES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFRARED RADIATION
LAYERS
LOW TEMPERATURE
LUMINESCENCE
PHOTOLUMINESCENCE
PNICTIDES
RADIATIONS
RED SHIFT
SEMIMETALS
SILICON
SPECTRA
SUBSTRATES
ULTRALOW TEMPERATURE