High-performance GaAs/AlGaAs graded refractive index separate confinement heterostructure lasers grown by molecular-beam epitaxy on Si/sub 3/N/sub 4/ masked substrates

Journal Article · Tue Feb 28 23:00:00 EST 1989 · J. Vac. Sci. Technol., B; (United States)

DOI:https://doi.org/10.1116/1.584761· OSTI ID:6475506

Van Gieson, E; Meier, H P; Harder, C; Buchmann, P; Webb, D; Walter, W

High-performance single quantum well graded refractive index separate confinement heterostructure lasers have been grown by molecular-beam epitaxy on Si/sub 3/ N/sub 4/ masked substrates. Lateral optical, carrier, and current confinement is supplied by the faceting which occurs during growth. Stripe lasers fabricated on 10-..mu..m-wide openings in the (011-bar) direction have threshold currents as low as 15 mA and internal quantum efficiency of 81% for a 500-..mu..m-long cavity.

• Research Organization: IBM Reseach Division, Zurich Research Laboratory, 8803 Rueschlikon, Switzerland
• OSTI ID: 6475506
• Journal Information: J. Vac. Sci. Technol., B; (United States), Journal Name: J. Vac. Sci. Technol., B; (United States) Vol. 7:2; ISSN JVTBD
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
EFFICIENCY
ENERGY
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
JUNCTIONS
LASER CAVITIES
LASERS
MOLECULAR BEAM EPITAXY
NITRIDES
NITROGEN COMPOUNDS
PERFORMANCE
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SILICON COMPOUNDS
SILICON NITRIDES
SORPTIVE PROPERTIES
SURFACE PROPERTIES
THRESHOLD ENERGY