Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Energy dependence of proton-induced displacement damage in gallium arsenide

Conference · · IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:7149566
Nonionizing energy deposition in gallium arsenide has been calculated for protons with energies ranging from 1 to 1000 MeV. The calculations are compared with new experimental results for ion implanted gallium arsenide resistors and Hall samples irradiated with protons in the energy range 1 to 60 MeV. Results are also compared with recent studies of proton induced displacement damage in silicon.
Research Organization:
Mission Research Corp., 5434 Ruffin Road, San Diego, CA (US)
OSTI ID:
7149566
Report Number(s):
CONF-8707112-
Conference Information:
Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: NS-34:6
Country of Publication:
United States
Language:
English