Energy dependence of proton-induced displacement damage in gallium arsenide
Conference
·
· IEEE Trans. Nucl. Sci.; (United States)
OSTI ID:7149566
Nonionizing energy deposition in gallium arsenide has been calculated for protons with energies ranging from 1 to 1000 MeV. The calculations are compared with new experimental results for ion implanted gallium arsenide resistors and Hall samples irradiated with protons in the energy range 1 to 60 MeV. Results are also compared with recent studies of proton induced displacement damage in silicon.
- Research Organization:
- Mission Research Corp., 5434 Ruffin Road, San Diego, CA (US)
- OSTI ID:
- 7149566
- Report Number(s):
- CONF-8707112-
- Conference Information:
- Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: NS-34:6
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHANNELING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELEMENTS
ENERGY DENSITY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTERACTIONS
ION CHANNELING
IRRADIATION
NUCLEON BEAMS
PARTICLE BEAMS
PHYSICAL RADIATION EFFECTS
PNICTIDES
PROTON BEAMS
RADIATION EFFECTS
SEMIMETALS
SILICON
360605* -- Materials-- Radiation Effects
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHANNELING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELEMENTS
ENERGY DENSITY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INTERACTIONS
ION CHANNELING
IRRADIATION
NUCLEON BEAMS
PARTICLE BEAMS
PHYSICAL RADIATION EFFECTS
PNICTIDES
PROTON BEAMS
RADIATION EFFECTS
SEMIMETALS
SILICON