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Co[sup 60] gamma ray and electron displacement damage studies of semiconductors

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:6558730
 [1];  [2]; ;  [3]; ; ;  [4]
  1. Naval Research Lab., Washington, DC (United States)
  2. Naval Research Lab., Washington, DC (United States) Univ. of Maryland, Baltimore, MD (United States). Dept. of Physics
  3. Spire Corp., Bedford, MA (United States)
  4. SFA Inc., Landover, MD (United States)
A general method for relating Co[sup 60] gamma ray and monoenergetic electron beam displacement damage is presented. The approach is based on concept of effective displacement damage dose'', which is analogous to ideas used to study ionizing radiation effects. The response to electron damage of p-type gallium arsenide and indium phosphide solar cells, as previously reported for p-type silicon solar cells, is proportional to the square of the nonionizing energy loss.
OSTI ID:
6558730
Report Number(s):
CONF-940726--
Conference Information:
Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 41:6Pt1
Country of Publication:
United States
Language:
English