CHARGED PARTICLE RADIATION DAMAGE IN SEMICONDUCTORS. VIII. THE ELECTRON ENERGY DEPENDENCE OF RADIATION DAMAGE IN PHOTOVOLTAIC DEVICES
Technical Report
·
OSTI ID:4652311
A series of experiments using electrons from 1 to 40 Mev was performed to measure the energy dependence of electron radiation damage in p on n and n on p silicon and gallium arsenide solar cells. The experimental results indicate that: (a) 1 ohm-cm p on n silicon and gallium arsenide solar cells respond according to predicted energy dependence relationships based on simple displacement theory and (b) 1 ohm-cm and 10 ohm-cm n on p silicon solar cells depart from the simple theoretical predictions by exhibiting a much greater sensitivity to incident electron energy. The details of the mechanism responsible for the departure of p-type silicon from simple displacement theory are not clear at this time. (auth)
- Research Organization:
- Space Technology Labs., Inc., Redondo Beach, Calif.
- NSA Number:
- NSA-17-039672
- OSTI ID:
- 4652311
- Report Number(s):
- NP-13133
- Country of Publication:
- United States
- Language:
- English
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