Displacement damage in GaAs structures

Conference · Thu Dec 01 04:00:00 EST 1988 · IEEE Trans. Nucl. Sci.; (United States)

OSTI ID:6271113

Summers, G P; Xapsos, M A; Dale, C J; Marshall, P W; Petersen, E L; Burke, E A

High energy knock-on atoms produced by incident protons are much more important in determining the total nonionizing energy deposited in GaAs than in Si, due to the relative size of the Lindhard correction for partitioning the recoil energy. High energy recoils are mainly produced by inelastic nuclear interactions between the incident protons and the target atoms. A review of previous calculations indicates that both the fast cascade and the evaporation phases of the inelastic interaction contribute to the average energy of the recoiling ion. New calculations are presented for the energy dependence of the nonionizing energy deposited in GaAs as a result of inelastic interaction with protons over the energy range 10 - 1000 MeV. These calculations are combined with the previously determined contribution from elastic interactions to obtain the energy dependence of the total nonionizing energy deposited in GaAs by protons. The calculation is compared with new and earlier experimental data for ion implanted GaAs resistors irradiated with protons over the energy range 40 - 188 MeV, in order to form a basis whereby proton displacement effects in GaAs structures can be predicted.

• Research Organization: Naval Research Lab., Washington, DC (US); Mission Research Corp., San Diego, CA (US)
• OSTI ID: 6271113
• Report Number(s): CONF-880730-
• Conference Information: Journal Name: IEEE Trans. Nucl. Sci.; (United States) Journal Volume: 35:6
• Country of Publication: United States
• Language: English

Related Subjects

640304* -- Atomic
Molecular & Chemical Physics-- Collision Phenomena
645103 -- High Energy Physics-- Particle Interactions & Properties-Experimental-- Strong Interactions & Baryon & Meson Properties
651100 -- Nuclear Physics-- Experimental Techniques-- (1980-)
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
73 NUCLEAR PHYSICS AND RADIATION PHYSICS
74 ATOMIC AND MOLECULAR PHYSICS
ARSENIC COMPOUNDS
ARSENIDES
BARYON REACTIONS
CALCULATION METHODS
CHARGED-PARTICLE REACTIONS
DATA
DIRECT REACTIONS
ELECTRICAL EQUIPMENT
ENERGY DEPENDENCE
EQUIPMENT
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HADRON REACTIONS
HIGH ENERGY PHYSICS
INELASTIC SCATTERING
INFORMATION
ION IMPLANTATION
KNOCK-ON REACTIONS
MEASURING INSTRUMENTS
NEUTRON DETECTORS
NUCLEAR REACTIONS
NUCLEON REACTIONS
NUMERICAL DATA
PHYSICS
PNICTIDES
PROTON REACTIONS
PROTON RECOIL DETECTORS
RADIATION DETECTORS
RESISTORS
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR RESISTORS
TARGETS