Transient capacitance measurement of deep defect levels in GaAs and Si. Physical sciences research papers
An understanding of the defects intentionally or unintentionally introduced in semiconductor crystals by crystal growth or device fabrication procedures or by operation in nuclear and space radiation environments is essential to insure proper performance of electronic and optoelectronic systems. The use of diode capacitance measurement techniques for the study of deep defect levels in semiconductors is discussed, including a recently developed technique based on transient capacitance effects. The theoretical and experimental details of this new technique, involving the use of a lock-in amplifier to process capacitance transients, are presented in appendices. This technique is applied to Schottky barrier and asymmetrical p-n junction diodes of gallium arsenide and silicon, which are primary materials of interest in a variety of device applications. Co60-gamma ray and electron irradiations on unimplanted material produce levels that are similar to some found in the complex defect spectra of ion-damaged samples. (GRA)
- Research Organization:
- Air Force Cambridge Research Labs., L.G. Hanscom Field, Mass. (USA)
- OSTI ID:
- 7142646
- Report Number(s):
- AD-A-022652; AFCRL-PSRP-655; AFCRL-TR-76-0024
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CAPACITORS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRICAL EQUIPMENT
ELECTROMAGNETIC RADIATION
ELECTRON BEAMS
ELEMENTS
EQUIPMENT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GAMMA RADIATION
IONIZING RADIATIONS
LEPTON BEAMS
PARTICLE BEAMS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATIONS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SILICON