Transient capacitance measurement of deep defect levels in GaAs and Si. Physical sciences research papers

Technical Report · Wed Jan 14 00:00:00 EST 1976

OSTI ID:7142646

Schott, J T; DeAngelis, H M; White, W R

An understanding of the defects intentionally or unintentionally introduced in semiconductor crystals by crystal growth or device fabrication procedures or by operation in nuclear and space radiation environments is essential to insure proper performance of electronic and optoelectronic systems. The use of diode capacitance measurement techniques for the study of deep defect levels in semiconductors is discussed, including a recently developed technique based on transient capacitance effects. The theoretical and experimental details of this new technique, involving the use of a lock-in amplifier to process capacitance transients, are presented in appendices. This technique is applied to Schottky barrier and asymmetrical p-n junction diodes of gallium arsenide and silicon, which are primary materials of interest in a variety of device applications. Co60-gamma ray and electron irradiations on unimplanted material produce levels that are similar to some found in the complex defect spectra of ion-damaged samples. (GRA)

• Research Organization: Air Force Cambridge Research Labs., L.G. Hanscom Field, Mass. (USA)
• OSTI ID: 7142646
• Report Number(s): AD-A-022652; AFCRL-PSRP-655; AFCRL-TR-76-0024
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
PHYSICAL RADIATION EFFECTS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DIODES
CRYSTAL DEFECTS
SILICON
CAPACITORS
ELECTRON BEAMS
GAMMA RADIATION
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CRYSTAL STRUCTURE
ELECTRICAL EQUIPMENT
ELECTROMAGNETIC RADIATION
ELEMENTS
EQUIPMENT
GALLIUM COMPOUNDS
IONIZING RADIATIONS
LEPTON BEAMS
PARTICLE BEAMS
PNICTIDES
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMIMETALS
360605* - Materials- Radiation Effects