Effect of the defectiveness of semiconductor on the characteristics of Pd-GaAs contacts
A study was made of the volt-ampere characteristics of Pd-GaAs Schottky barriers in relation to the defectiveness of the gallium arsenide. The defect content of the material was checked metallographically and by the method of x-ray topography. Single crystals of GaAs doped with Ge, Ge + Sb, and Ge + In were studied. Here, the electron concentration was (1-4) /times/ 10/sup 16/ cm/sup /minus/3/, and mean dislocation density ranged from 4 /times/ 10/sup 4/ to 2 /times/ 10/sup 2/ cm/sup /minus/2/. The defectiveness of the material was altered by the introduction of different concentrations of isovalent impurities. It was shown that for diodes produced by the same technology, the manifestation of low-temperature VAC anomalies and the current mechanism are determined by structural features of the semiconductor (by dislocations and microdefects).
- Research Organization:
- Tomsk Univ. (USSR)
- OSTI ID:
- 5888903
- Journal Information:
- Sov. Phys. J. (Engl. Transl.); (United States), Journal Name: Sov. Phys. J. (Engl. Transl.); (United States) Vol. 31:7; ISSN SOPJA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360602* -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
ANTIMONY
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL DOPING
CRYSTAL STRUCTURE
CURRENTS
DISLOCATIONS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
ELECTRON DENSITY
ELEMENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GERMANIUM
IMPURITIES
INDIUM
LINE DEFECTS
MATERIALS
MATERIALS TESTING
METALS
PALLADIUM
PHYSICAL PROPERTIES
PLATINUM METALS
PNICTIDES
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TESTING
TRANSITION ELEMENTS