A comparative study of heavily irradiated silicon and non irradiated SI LEC GaAs detectors

Journal Article · Mon Jun 01 04:00:00 EDT 1998 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.682455· OSTI ID:624190

Biggeri, U; Borchi, E; Bruzzi, M ^[1]

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1. I.N.F.N. Firenze (Italy). Dipt. di Energetica S. Stecco; and others

Silicon p{sup +}n junctions irradiated with neutron and proton fluences in the range 5 {times} 10{sup 11}--4 {times} 10{sup 15} cm{sup {minus}2} and non-irradiated Semi Insulating (SI) LEC GaAs Schottky barriers have been analyzed. In silicon the concentration N{sub t} of the main radiation-induced deep traps (Et {approx} 0.44--0.54 eV) is found to increase as N{sub t} {alpha} f achieving values up to 5 {times} 10{sup 15} cm{sup {minus}3} and a mobility saturation at 100 cm{sup 2}/Vs has been observed at the highest fluences. A quantitative comparison between heavily irradiated silicon and non-irradiated GaAs evidenced similar charge collection efficiencies, a quasi-intrinsic bulk and similar concentrations of deep defects. On this basis, a unique model, correlating the lattice disorder and the detector performance, is suggested.

• OSTI ID: 624190
• Report Number(s): CONF-971147--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3Pt1 Vol. 45; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
COMPARATIVE EVALUATIONS
CRYSTAL DEFECTS
GALLIUM ARSENIDES
JUNCTION DETECTORS
PERFORMANCE
PHYSICAL RADIATION EFFECTS
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DETECTORS
SI SEMICONDUCTOR DETECTORS