The photoconductivity spectrum of electron and neutron irradiated in lightly doped GaAs

Conference · Sat Nov 30 23:00:00 EST 1991 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:5619475

Khanna, S ^[1]; Carlone, C; Halle, S; Parenteau, M; Beliveau, A; Aktik, C ^[2]; Gerdes, Jr, J W ^[3]

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1. Defence Research Establishment, Ottawa, ON (Canada)
2. Sherbrooke Univ., PQ (Canada)
3. Army Pulse Radiation Facility, Aberdeen Proving Ground, MD (US)

Semi-insulating samples of GaAs have been exposed to electron irradiation (7 Mev) in the fluence range 1 {times} 10{sup 10} to 1 {times} 10{sup 15} cm{sup {minus}2} and to neutron irradiation (1 Mev equivalent damage in Si) in the fluence range 7.7 {times} 10{sup 14} to 2.4 {times} 10{sup 16} cm{sup {minus}2}. The spectral photoconductivity in the energy range 1.375 to 1.550 eV was obtained. In this paper, from the temperature dependence of the photoconductivity, the authors confirm the existence of a shallow donor state (40 meV) in electron irradiated GaAs. The temperature dependence of the photoconductivity of the two types of radiations indicates that a similar shallow donor state is induced also in neutron irradiated GaAs. Photoluminescence experiments suggest 31 meV for its energy. The photoconductivity is affected more by electron irradiation (a factor of 10 in dose) than by neutron irradiation and the authors attribute this to the relative depth of the donor levels induced. The authors have measured the photoconductivity of MOCVD grown GaAs doped n (Si) (5 {times} 10{sup 14} to 10{sup 17} cm{sup {minus}3}). The authors confirm in unirradiated samples the formation of an impurity band at about 10{sup 16} cm{sup {minus}3}. One MOCVD sample doped to 1.02 {times} 10{sup 16} cm{sup {minus}3} was exposed to the same (1 MeV) neutron irradiation to fluences of 10{sup 13}, 10{sup 14} and 10{sup 15} cm{sup {minus}2}. The temperature dependence of the photoconductivity of this sample with heavy doping is very different from that of semi-insulating samples and it is determined by deeper defect states.

• OSTI ID: 5619475
• Report Number(s): CONF-910751--
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 38:6; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DOPED MATERIALS
DOSE RATES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRONS
ELEMENTARY PARTICLES
ENERGY RANGE
ENERGY SPECTRA
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HADRONS
LEPTONS
MATERIALS
MEV RANGE
MEV RANGE 01-10
N-TYPE CONDUCTORS
NEUTRON FLUENCE
NEUTRONS
NUCLEONS
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
SPECTRA
SURFACE COATING
TEMPERATURE DEPENDENCE