Ultrafast photoconductor radiation detectors
We are developing and investigating homogeneous, photoconductive semiconductors as very fast radiation detectors. We irradiated GaAs, Cr-doped GaAs, and Fe-doped InP crystals with 14-MeV neutrons to produce lattice defects that act as fast-recombination centers for electrons and holes. Using short-pulse lasers and 17-MeV linear-accelerator electrons and bremsstrahlung x rays and ..gamma.. rays, we have measured the temporal response and sensitivity of these photoconductors as functions of fluence ranging from 10/sup 12/ to 10/sup 16/ neutrons/cm/sup 2/. The carrier lifetime and mobility decrease monotonically as the neutron fluence increases, resulting in faster detector response at the expense of sensitivity. A resolving time of less than 30 ps (FWHM) was measured for the above photoconductors irradiated with approx. 10/sup 15/ neutrons/cm/sup 2/. 4 refs., 5 figs.
- Research Organization:
- Lawrence Livermore National Lab., CA (USA); EG and G, Inc., Las Vegas, NV (USA)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 6248048
- Report Number(s):
- UCRL-96004; CONF-8708110-18; ON: DE87013487
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605 -- Materials-- Radiation Effects
440101* -- Radiation Instrumentation-- General Detectors or Monitors & Radiometric Instruments
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
CARRIER MOBILITY
CHROMIUM
DATA
ELEMENTS
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
IRON
IRRADIATION
MEASURING INSTRUMENTS
METALS
MOBILITY
NUMERICAL DATA
PERFORMANCE TESTING
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOCONDUCTORS
PNICTIDES
RADIATION DETECTORS
SEMICONDUCTOR DETECTORS
SENSITIVITY
TESTING
TIMING PROPERTIES
TRANSITION ELEMENTS