skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Ultrafast photoconductor radiation detectors

Conference ·
OSTI ID:6248048

We are developing and investigating homogeneous, photoconductive semiconductors as very fast radiation detectors. We irradiated GaAs, Cr-doped GaAs, and Fe-doped InP crystals with 14-MeV neutrons to produce lattice defects that act as fast-recombination centers for electrons and holes. Using short-pulse lasers and 17-MeV linear-accelerator electrons and bremsstrahlung x rays and ..gamma.. rays, we have measured the temporal response and sensitivity of these photoconductors as functions of fluence ranging from 10/sup 12/ to 10/sup 16/ neutrons/cm/sup 2/. The carrier lifetime and mobility decrease monotonically as the neutron fluence increases, resulting in faster detector response at the expense of sensitivity. A resolving time of less than 30 ps (FWHM) was measured for the above photoconductors irradiated with approx. 10/sup 15/ neutrons/cm/sup 2/. 4 refs., 5 figs.

Research Organization:
Lawrence Livermore National Lab., CA (USA); EG and G, Inc., Las Vegas, NV (USA)
DOE Contract Number:
W-7405-ENG-48
OSTI ID:
6248048
Report Number(s):
UCRL-96004; CONF-8708110-18; ON: DE87013487
Resource Relation:
Conference: 31. SPIE annual international technical symposium on optical and optoelectronic applied science and engineering, San Diego, CA, USA, 16 Aug 1987; Other Information: Paper copy only, copy does not permit microfiche production
Country of Publication:
United States
Language:
English