Neutron-treated, ultrafast, photoconductor detectors
We have investigated homogeneous, photoconductive semiconductors as very fast radiation detectors. We irradiated GaAs, Cr-doped GaAs, and Fe-doped InP crystals with 14 MeV neutrons to produce lattice defects that act as fast recombination centers for electrons and holes. Using short-pulse lasers and 17 MeV linear-accelerator electrons and bremsstrahlung x rays, we measured the temporal response and sensitivity of these photoconductors as functions of fluence ranging from 10/sup 12/ to 10/sup 16/ neutrons/cm/sup 2/. The carrier lifetime and mobility decrease monotonically as the neutron fluence increases, resulting in faster detector response at the expense of sensitivity. A resolving time of less than 30 ps (full width at half maximum) was measured for the above photoconductors irradiated with /similar to/10/sup 15/ neutrons/cm/sup 2/.
- Research Organization:
- Lawrence Livermore National Laboratory, P.O. Box 808, Livermore, California 94551
- OSTI ID:
- 6473995
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 54:15
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
GALLIUM ARSENIDES
PHYSICAL RADIATION EFFECTS
INDIUM PHOSPHIDES
NEUTRON DETECTION
SEMICONDUCTOR DETECTORS
PHOTODETECTORS
RESPONSE FUNCTIONS
SENSITIVITY
BREMSSTRAHLUNG
CARRIER LIFETIME
CARRIER MOBILITY
CRYSTAL DEFECTS
EXPERIMENTAL DATA
LASERS
LINEAR ACCELERATORS
MEV RANGE 10-100
NEUTRONS
TIME RESOLUTION
ACCELERATORS
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
CRYSTAL STRUCTURE
DATA
DETECTION
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
ENERGY RANGE
FERMIONS
FUNCTIONS
GALLIUM COMPOUNDS
HADRONS
INDIUM COMPOUNDS
INFORMATION
LIFETIME
MEASURING INSTRUMENTS
MEV RANGE
MOBILITY
NUCLEONS
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATION DETECTION
RADIATION DETECTORS
RADIATION EFFECTS
RADIATIONS
RESOLUTION
TIMING PROPERTIES
440100* - Radiation Instrumentation
360603 - Materials- Properties