Neutron-treated, ultrafast, photoconductor detectors
We have investigated homogeneous, photoconductive semiconductors as very fast radiation detectors. We irradiated GaAs, Cr-doped GaAs, and Fe-doped InP crystals with 14 MeV neutrons to produce lattice defects that act as fast recombination centers for electrons and holes. Using short-pulse lasers and 17 MeV linear-accelerator electrons and bremsstrahlung x rays, we measured the temporal response and sensitivity of these photoconductors as functions of fluence ranging from 10/sup 12/ to 10/sup 16/ neutrons/cm/sup 2/. The carrier lifetime and mobility decrease monotonically as the neutron fluence increases, resulting in faster detector response at the expense of sensitivity. A resolving time of less than 30 ps (full width at half maximum) was measured for the above photoconductors irradiated with /similar to/10/sup 15/ neutrons/cm/sup 2/.
- Research Organization:
- Lawrence Livermore National Laboratory, P.O. Box 808, Livermore, California 94551
- OSTI ID:
- 6473995
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 54:15; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ACCELERATORS
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
BREMSSTRAHLUNG
CARRIER LIFETIME
CARRIER MOBILITY
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DATA
DETECTION
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
ENERGY RANGE
EXPERIMENTAL DATA
FERMIONS
FUNCTIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HADRONS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASERS
LIFETIME
LINEAR ACCELERATORS
MEASURING INSTRUMENTS
MEV RANGE
MEV RANGE 10-100
MOBILITY
NEUTRON DETECTION
NEUTRONS
NUCLEONS
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTODETECTORS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION DETECTION
RADIATION DETECTORS
RADIATION EFFECTS
RADIATIONS
RESOLUTION
RESPONSE FUNCTIONS
SEMICONDUCTOR DETECTORS
SENSITIVITY
TIME RESOLUTION
TIMING PROPERTIES