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Title: Neutron-treated, ultrafast, photoconductor detectors

Journal Article · · Appl. Phys. Lett.; (United States)
DOI:https://doi.org/10.1063/1.100694· OSTI ID:6473995

We have investigated homogeneous, photoconductive semiconductors as very fast radiation detectors. We irradiated GaAs, Cr-doped GaAs, and Fe-doped InP crystals with 14 MeV neutrons to produce lattice defects that act as fast recombination centers for electrons and holes. Using short-pulse lasers and 17 MeV linear-accelerator electrons and bremsstrahlung x rays, we measured the temporal response and sensitivity of these photoconductors as functions of fluence ranging from 10/sup 12/ to 10/sup 16/ neutrons/cm/sup 2/. The carrier lifetime and mobility decrease monotonically as the neutron fluence increases, resulting in faster detector response at the expense of sensitivity. A resolving time of less than 30 ps (full width at half maximum) was measured for the above photoconductors irradiated with /similar to/10/sup 15/ neutrons/cm/sup 2/.

Research Organization:
Lawrence Livermore National Laboratory, P.O. Box 808, Livermore, California 94551
OSTI ID:
6473995
Journal Information:
Appl. Phys. Lett.; (United States), Vol. 54:15
Country of Publication:
United States
Language:
English

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