Semi-insulating behavior of n-type lightly Fe-doped InP wafers after thermal annealing

Book · Mon Dec 30 23:00:00 EST 1996

OSTI ID:536224

Fornari, R; Zappettini, A; Gombia, E; Mosca, R; Curti, M ^[1]; Chearkaoui, K; Marrakchi, G ^[2]

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1. CNR-MASPEC Inst., Parma (Italy)
2. INSA URA, Villeurbanne (France)

As-grown Fe-doped semiconducting (SC) InP samples (residual carrier concentration {le} 10{sup 15} cm{sup {minus}3}, estimated iron concentration 6--8 {times} 10{sup 15} cm{sup {minus}3}) were seen to convert to semi-insulating (SI), with high resistivity and good mobility, when annealed under appropriate conditions. This fact is very interesting since it gives the opportunity of obtaining semi-insulating InP with low Fe content. In this paper the authors report the annealing parameters together with the results of an extensive characterization (by Hall effect, C-V, IR absorption and PITCS) of the treated samples. The results suggest that the conductivity drop is related to a considerable loss of shallow donors.

• OSTI ID: 536224
• Report Number(s): CONF-960498--; ISBN 0-7803-3283-0
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
ACTIVATION ENERGY
ANNEALING
CARRIER MOBILITY
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
HALL EFFECT
INDIUM PHOSPHIDES
INFRARED RADIATION
IRON