Annealing-related conductivity conversion in lightly Fe-doped n-type InP wafers

Conference · Tue Dec 31 04:00:00 EST 1996

OSTI ID:541062

Fornari, R; Zappettini, A; Gombia, E; Mosca, R; Curti, M ^[1]

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1. CNR-MASPEC Inst., Parma (Italy)

As-grown semiconducting InP wafers containing iron at a level between 5 and 8 {times} 10{sup 15} cm{sup {minus}3} were seen to convert to semi-insulating, with high resistivity and good mobility, after a thermal treatment at 900 C. This fact is interesting since it allows the preparation of semi-insulating InP with Fe content substantially lower than in standard LEC material. In this paper the authors report the annealing parameters and the results of an extensive electro-optical characterization of the treated samples. The experimental results suggest that the conductivity drop is mainly due to a considerable loss of shallow donors.

• OSTI ID: 541062
• Report Number(s): CONF-960450--; ISBN 0-7803-3179-6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRO-OPTICAL EFFECTS
INDIUM PHOSPHIDES
IRON
N-TYPE CONDUCTORS