Electrical properties of Fe-doped semi-insulating InP after proton bombardment and annealing
The effects of proton bombardment and subsequent 30-min annealing on the electrical properties of semi-insulating InP doped with Fe have been measured for proton doses and for annealing temperatures from 80 to 750 C. Proton bombardment decreases the sheet resistivity. The sheet resistivity is further decreased by annealing at temperatures up to 200-250 C but is increased by annealing at higher temperatures. Semi-insulating behavior is restored by annealing at 450 C or above. These changes can be explained by the formation of donor and acceptor defects at relative rates that vary with proton dose and by the removal of these defects at relative rates that vary with annealing temperature, although a variation in the effectiveness of the Fe acceptors or a hopping contribution to the conductivity may also play a role.
- Research Organization:
- Massachusetts Inst. of Tech., Lexington (USA). Lincoln Lab.
- OSTI ID:
- 5287820
- Report Number(s):
- AD-A-188288/5/XAB; JA-5997
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
ANNEALING
BARYONS
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
HADRONS
HEAT TREATMENTS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
IRON
MATERIALS
METALS
NUCLEONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
PROTONS
RADIATION EFFECTS
TRANSITION ELEMENTS