Semi-insulating InP grown at low temperature by metalorganic chemical vapor deposition

Journal Article · Mon Jul 18 04:00:00 EDT 1994 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.112374· OSTI ID:7028323

Gardner, N F; Hartmann, Q J; Stockman, S A; Stillman, G E; Baker, J E; Malin, J I; Hsieh, K C ^[1]

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1. Center for Compound Semiconductor Microelectronics, Materials Research Laboratory, and Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)

The growth of semi-insulating epitaxial InP layers at low substrate temperature (460 [degree]C) by low-pressure metalorganic chemical vapor deposition has been demonstrated using CCl[sub 4] as a dopant source. The resistivity of the material is a function of diluted CCl[sub 4] flow rate used during growth. For flow rates less than 5 sccm the material is [ital n] type, but for higher flows the resistivity of the material is approximately 5[times]10[sup 9] [Omega] cm. The semi-insulating behavior of the material is maintained after annealing at 600 [degree]C. Transmission electron microscopy does not reveal the presence of phosphorus precipitates in as-grown samples or in samples annealed at 400 and 600 [degree]C. There is significant carbon, hydrogen, and chlorine incorporation in the layers, as measured by secondary ion mass spectrometry. Room-temperature photoluminescence measurements suggest that nonradiative recombination is significant in the material and increases in samples grown with higher CCl[sub 4] flows.

• DOE Contract Number: FG02-91ER45439
• OSTI ID: 7028323
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 65:3; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
360606 -- Other Materials-- Physical Properties-- (1992-)
AMBIENT TEMPERATURE
ANNEALING
COATINGS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
EPITAXY
FILMS
HEAT TREATMENTS
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LUMINESCENCE
MICROSCOPY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
RECOMBINATION
THIN FILMS
VAPOR DEPOSITED COATINGS