Magnesium doping of GaN by metalorganic chemical vapor deposition
- Rensselaer Polytechnic Inst., Troy, NY (United States)
P-type GaN films were grown on sapphire substrates in a horizontal metalorganic chemical vapor deposition system using (C{sub 5}H{sub 5}){sub 2}Mg (Cp{sub 2}Mg) as the p-dopant source. It is found that the acceptor concentration in the post-growth annealed GaN samples increases with the Mg flow rate and reaches a peak value of 1 {times} 10{sup 19} cm{sup {minus}3} at Mg flow rate of 0.84 {micro}mol/min. The films remain semi-insulating even after annealing when the Mg flow rate is higher than 1.08 {micro}mol/min. The effects of annealing temperature and duration on the electrical properties of GaN are also investigated. The results confirm that a 800 C, 30 minutes post-growth annealing in N{sub 2} ambient is sufficient to activate most of the Mg atoms. In addition, study of rapid thermal annealing of Mg-doped GaN was carried out and the results show that the p-type acceptor concentration obtained is comparable to the results obtained using furnace annealing process. Finally, GaN light emitting diodes (LEDs) are demonstrated using undoped layer as the n-type base layer in a p-on-n structure. The light emission spectra are dominated by the 430 nm peak, accompanied with two relatively weak peaks located at 380 nm and 550 nm.
- OSTI ID:
- 394995
- Report Number(s):
- CONF-951155--; ISBN 1-55899-298-7
- Country of Publication:
- United States
- Language:
- English
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