Role of arsenic hexagonal growth-suppression on a cubic GaNAs growth using metalorganic chemical vapor deposition
Conference
·
OSTI ID:20104549
The hexagonal domain suppression-effects in cubic-GaNAs grown by metalorganic chemical-vapor deposition (MOCVD) is reported. A thin buffer layer (20 nm) was first grown on a substrate at 853 K using trimethylgallium and dimethylhydrazine (DMHy), and GaNAs samples were grown at different AsH{sub 3} flow rates (0 {approximately} 450 {micro}mol/min) at 1,193 K. As a result, three types of surface morphologies were obtained: the first was a smooth surface (AsH{sub 3} = 0 {micro}mol/min); and the third involved three-dimensional surface morphologies (above 450 {micro}mol/min of AsH{sub 3} flow rate). Furthermore, it was confirmed using X-ray diffraction that the mixing ratio of hexagonal GaNAs in cubic GaNAs decreased with an increase of the AsH{sub 3} flow rate. The authors could obtain GaNAs having a cubic component of above 85% at AsH{sub 3} flow rates above 20 {micro}mol/min. Therefore, the MOCVD growth method using AsH{sub 3} and DMHy was mostly effective for suppressing hexagonal GaNAs. It was observed that the photoluminescence intensity of GaNAs was decreased with increase of arsine flow rate.
- Research Organization:
- Furukawa Electric Co., Ltd., Yokohama (JP)
- OSTI ID:
- 20104549
- Country of Publication:
- United States
- Language:
- English
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