Hydrazine N Source for Growth of GaInNAs for Solar Cells

Conference · Tue May 25 04:00:00 EDT 1999

OSTI ID:7076

Friedman, D J; Geisz, G F; Kurtz, S R; Norman, A G ^[1]; Yeh, Y C. M. ^[2]

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1. National Renewable Energy Laboratory
2. TECSTAR, Inc.

We evaluate hydrazine (Hy) as a nitrogen precursor source for the growth of GaNAs and GaInNAs for application in 1-eV solar cells lattice-matched to GaAs, and compare it to the more commonly used dimethylhydrazine (DMHy). The incorporation efficiency of N into the GaNAs alloy is found to be one to two orders of magnitude higher with Hy than with DMHy. This high N incorporation makes convenient the growth of GaNAs at higher growth temperatures, Tg=650 C, and arsine flows, AsH3/III=44, than are generally possible with the use of DMHy. GaInNAs and GaNAs solar cells are grown under these growth conditions and compared to a GaAs cell grown under the same conditions to determine the extent to which the poor minority-carrier properties routinely observed for the N-containing material can be attributed to the growth conditions. Finally, the background carrier concentrations for Hy- and DMHy-grown material are compared, and little difference is found between the two sources..

• Research Organization: National Renewable Energy Lab., Golden, CO (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC36-99GO10337
• OSTI ID: 7076
• Report Number(s): NREL/CP-520-26609; ON: DE00007076
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
ALLOYS
EFFICIENCY
HYDRAZINE
NITROGEN
PRECURSOR
SOLAR CELLS