A comparative study of the defects in Fe-doped or undoped semi-insulating InP after high temperature annealing

Conference · Tue Dec 31 04:00:00 EST 1996

OSTI ID:541067

Cherkaoui, K; Kallel, S; Marrakchi, G ^[1]; Karoui, A ^[2]

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1. INSA de Lyon, Villeurbanne (France). Lab. de Physique de la Matiere
2. Inst. National de la Recherche Scientifique et Technique, Hamman Lif (Tunisia)

Fe-doped or undoped semi-insulating InP samples submitted to high temperature annealing process have been studied by Photoinduced current transient spectroscopy (PICTS) in order to compare the traps observed. The PICTS spectra of these samples show separately the presence of a multitude of traps having activation energies ranging from 0.12 eV to 0.66 eV. The Fe{sub In} trap level has not been clearly observed in all the samples. The comparison of the thermal parameters of the observed traps allows to assign some of them to a same defect. However, the identification seems to be less evident concerning other traps and should be rather related to the properties of the starting material.

• OSTI ID: 541067
• Report Number(s): CONF-960450--; ISBN 0-7803-3179-6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
COMPARATIVE EVALUATIONS
CRYSTAL DEFECTS
DOPED MATERIALS
INDIUM PHOSPHIDES
IRON