Photocurrent mapping of Fe-doped semi-insulating InP
Conference
·
OSTI ID:405545
- ETS Ingenieros Industriales, Valladolid (Spain); and others
Using a physical model which accounts for the photocurrent contrast on the basis of the electronic transitions associated with electrically active Fe, we have investigated numerous InP wafers, which were grown under different conditions and submitted to different thermal treatments. It is observed that the photocurrent fluctuations are mainly due to nonuniform distribution of the neutral Fe (Fe{sup 3+}) atoms. Different samples were studied in order to determine their homogeneity of different growth and treatment conditions.
- OSTI ID:
- 405545
- Report Number(s):
- CONF-951231--
- Country of Publication:
- United States
- Language:
- English
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