Gallium arsenide epitaxial growth (a bibliography with abstracts). Report for 1964-Oct 1975
Technical Report
·
OSTI ID:7140034
Research on GaAs epitaxial growth in liquid and vapor phases is included in this bibliography. Techniques, tests, physical properties, crystal structure and doping are described. Gallium arsenide use in optical modulators, fiber optics, semiconductor diodes and microwave equipment is also discussed. (Contains 172 abstracts) (GRA)
- Research Organization:
- National Technical Information Service, Springfield, Va. (USA)
- OSTI ID:
- 7140034
- Report Number(s):
- NTIS/PS-76/0102
- Country of Publication:
- United States
- Language:
- English
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