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U.S. Department of Energy
Office of Scientific and Technical Information

Gallium arsenide epitaxial growth (a bibliography with abstracts). Report for 1964-Oct 1975

Technical Report ·
OSTI ID:7140034

Research on GaAs epitaxial growth in liquid and vapor phases is included in this bibliography. Techniques, tests, physical properties, crystal structure and doping are described. Gallium arsenide use in optical modulators, fiber optics, semiconductor diodes and microwave equipment is also discussed. (Contains 172 abstracts) (GRA)

Research Organization:
National Technical Information Service, Springfield, Va. (USA)
OSTI ID:
7140034
Report Number(s):
NTIS/PS-76/0102
Country of Publication:
United States
Language:
English