The electrical and metallurgical properties of defects in compound semiconductors. Final report, 7 Oct 1968--7 Feb 1975
Technical Report
·
OSTI ID:7351270
The program was directed toward the following five separate projects related to the electrical, optical, and metallurgical properties of defects in compound semiconductors: properties of gallium phosphide green electroluminescent diodes; effects of gamma radiation on gallium arsenide crystals and Gunn diodes; liquid epitaxy and physical properties of Al/sub x/Ga/sub 1-x/As; lattice defects in annealed gallium arsenide single crystals; electrical, optical, and metallurgical properties of defects in Al/sub x/Ga/sub 1-x/As. (GRA)
- Research Organization:
- Stanford Univ., Calif. (USA). Stanford Electronics Labs.
- OSTI ID:
- 7351270
- Report Number(s):
- AD-A-011282; SU-SEL-75-009
- Country of Publication:
- United States
- Language:
- English
Similar Records
Gallium arsenide epitaxial growth (a bibliography with abstracts). Report for 1964-Oct 1975
Boron arsenide and boron phosphide for high temperature and luminescent devices. Final technical report, 1 Jul 1969--31 Aug 1975
Defects in electronic materials
Technical Report
·
Sat Jan 31 23:00:00 EST 1976
·
OSTI ID:7140034
Boron arsenide and boron phosphide for high temperature and luminescent devices. Final technical report, 1 Jul 1969--31 Aug 1975
Technical Report
·
Mon Sep 01 00:00:00 EDT 1975
·
OSTI ID:7345441
Defects in electronic materials
Conference
·
Thu Dec 31 23:00:00 EST 1987
·
OSTI ID:6096059
Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALS
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
GAMMA RADIATION
HEAT TREATMENTS
IONIZING RADIATIONS
MONOCRYSTALS
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATIONS
RESEARCH PROGRAMS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
360605* -- Materials-- Radiation Effects
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALS
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
GAMMA RADIATION
HEAT TREATMENTS
IONIZING RADIATIONS
MONOCRYSTALS
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATIONS
RESEARCH PROGRAMS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS