Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Defects in electronic materials

Conference ·
OSTI ID:6096059
; ;

This book collects papers on semiconductor materials. Topics include: oxygen precipitation formation, silicon, boron complexes in silicon, radiation-induced defects in indium antinomide, gallium arsenides, vapor phase epitaxy, gallium and indium phosphides, crystal doping, and deep level transient spectroscopies.

OSTI ID:
6096059
Report Number(s):
CONF-8711157-
Country of Publication:
United States
Language:
English

Similar Records

Heteroepitaxy on silicon II
Conference · Wed Dec 31 23:00:00 EST 1986 · OSTI ID:5370177
Defect recognition and image processing in semiconductors 1995
Conference · Sat Nov 30 23:00:00 EST 1996 · OSTI ID:405505
The electrical and metallurgical properties of defects in compound semiconductors. Final report, 7 Oct 1968--7 Feb 1975
Technical Report · Tue Apr 01 00:00:00 EDT 1975 · OSTI ID:7351270

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360602* -- Other Materials-- Structure & Phase Studies
360605 -- Materials-- Radiation Effects
ABSTRACTS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DEEP LEVEL TRANSIENT SPECTROSCOPY
DOCUMENT TYPES
ELEMENTS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LEADING ABSTRACT
MATERIALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SPECTROSCOPY
STRUCTURAL CHEMICAL ANALYSIS