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Defect recognition and image processing in semiconductors 1995

Conference ·
OSTI ID:405505
 [1]
  1. ed.
+ Show Author Affiliations

This book presents research topics which were presented at the Sixth International Conference on Defect Image Processing in Semiconductors, 1995. Topics include: defect studies on gallium arsenides; electron beam techniques; defect studies of optical materials; defect characterization; various techniques including deep level transient spectroscopy, raman photoluminescence, and surface photovoltaic; silicon; and light scattering techniques. Individual papers have been processed separately for the United States Department of Energy databases.

OSTI ID:
405505
Report Number(s):
CONF-951231--; ISBN 0-7503-0372-7
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
CRYSTAL DEFECTS
GALLIUM ARSENIDES
IMAGES
LEADING ABSTRACT
LITHIUM COMPOUNDS
MEETINGS
NIOBATES
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SILICON