Heteroepitaxy on silicon II
Conference
·
OSTI ID:5370177
These proceedings collect papers on silicon epitaxy. Topics include: Molecular beam epitaxy, chemical vapor deposition, annealing, transmission electron microscopy, semiconductor device fabrication, doped materials, gallium arsenide, and gallium phosphides.
- OSTI ID:
- 5370177
- Report Number(s):
- CONF-8704252--; ISBN: 0-0931837-58-3
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
ABSTRACTS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DOCUMENT TYPES
DOPED MATERIALS
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
LEADING ABSTRACT
MATERIALS
MICROSCOPY
MOLECULAR BEAM EPITAXY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SURFACE COATING
TRANSMISSION ELECTRON MICROSCOPY
360601* -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
ABSTRACTS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DOCUMENT TYPES
DOPED MATERIALS
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
LEADING ABSTRACT
MATERIALS
MICROSCOPY
MOLECULAR BEAM EPITAXY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SURFACE COATING
TRANSMISSION ELECTRON MICROSCOPY