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Metal organic chemical vapor deposition of 111-v compounds on silicon

Patent ·
OSTI ID:865847
 [1]
  1. Wellesley, MA
+ Show Author Affiliations

Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO
Assignee:
Advanced Energy Fund Limited Partnership (Peterborough, NH)
Patent Number(s):
US 4588451
OSTI ID:
865847
Country of Publication:
United States
Language:
English

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Related Subjects

/117/136/148/257/438/
111-v
aluminum
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iii-v
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