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Title: Organometallic chemical vapor deposition of III/V compound semiconductors with novel organometallic precursors

Journal Article · · J. Am. Chem. Soc.; (United States)
DOI:https://doi.org/10.1021/ja00226a051· OSTI ID:6050711

Compound semiconductors such as gallium arsenide (GaAs) and indium phosphide (InP) are important materials used in the fabrication of microelectronic and optoelectronic devices. Several techniques have been employed for the preparation of thin films of these materials, including organometallic chemical vapor deposition (OMCVD) and molecular beam epitaxy (MBE). Apart from the potential environmental, safety, and health hazards of handling pyrophoric and toxic reagents under these conditions, the conventional OMCVD methodology also suffers from stoichiometry control problems, impurity incorporation (particularly carbon), and unwanted side reactions. The ideal chemical solution to the problem is to cause the III-V bond to be as strong as, or stronger than, the other bonds in the molecule such that under film growth conditions the bonds between the group III and group V elements remain intact while the other bonds are broken. The obvious way to strengthen the III-V interaction is to replace the donor-acceptor linkage by a two-center, two-electron bond. The authors initial studies have therefore focussed on the design and synthesis of organometallic molecules which feature /sigma/ bonding between the group III and group V elements. A further objective was to lower the deposition temperature by employing substituents that undergo facile hydrocarbon elimination.

Research Organization:
Univ. of Texas, Austin (USA)
OSTI ID:
6050711
Journal Information:
J. Am. Chem. Soc.; (United States), Vol. 110:18
Country of Publication:
United States
Language:
English