Effect of post-oxidation anneal temperature on radiation-induced charge trapping in metal-oxide-semiconductor devices
Journal Article
·
· Appl. Phys. Lett.; (United States)
Polycrystalline silicon-gate metal-oxide-semiconductor (MOS) capacitors have been fabricated with high-temperature anneals from 800 to 950 /sup 0/C after gate oxidation and polycrystalline silicon deposition. Temperatures from 800 to 875 /sup 0/C are found to have very little effect on the radiation response of these devices. However, a rapid increase in radiation-induced oxide-trapped charge, ..delta..V/sub ot/, is observed for anneal temperatures above 875 /sup 0/C. This increase in ..delta..V/sub ot/ coincides with an experimentally observed change in the polycrystalline silicon grain structure. The anneal temperature was found to have a much smaller effect on radiation-induced interface-trap charge. The correlation of these results to other properties, e.g., stress, is discussed.
- Research Organization:
- Sandia National Laboratories, Albuquerque, New Mexico 87185
- OSTI ID:
- 7142586
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:9; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Conference
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Thu Nov 30 23:00:00 EST 1989
· IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA)
·
OSTI ID:7198827
Related Subjects
36 MATERIALS SCIENCE
360206 -- Ceramics
Cermets
& Refractories-- Radiation Effects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ANNEALING
CAPACITORS
CRYSTALS
ELECTRICAL EQUIPMENT
ELECTROMAGNETIC RADIATION
ELEMENTS
EQUIPMENT
FABRICATION
HARDENING
HEAT TREATMENTS
INTERFACES
IONIZING RADIATIONS
PERFORMANCE
PHYSICAL RADIATION EFFECTS
POLYCRYSTALS
RADIATION EFFECTS
RADIATION HARDENING
RADIATIONS
SEMIMETALS
SILICON
X RADIATION
360206 -- Ceramics
Cermets
& Refractories-- Radiation Effects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ANNEALING
CAPACITORS
CRYSTALS
ELECTRICAL EQUIPMENT
ELECTROMAGNETIC RADIATION
ELEMENTS
EQUIPMENT
FABRICATION
HARDENING
HEAT TREATMENTS
INTERFACES
IONIZING RADIATIONS
PERFORMANCE
PHYSICAL RADIATION EFFECTS
POLYCRYSTALS
RADIATION EFFECTS
RADIATION HARDENING
RADIATIONS
SEMIMETALS
SILICON
X RADIATION