Time-resolved thermal annealing of interface traps in aluminum gate-silicon oxide-silicon devices
Journal Article
·
· IEEE Trans. Nucl. Sci.; (United States)
Anneal kinetics of interface traps in aluminum gate-silicon oxide-silicon structures has been studied using capacitance-voltage measurements. The capacitors were annealed in forming gas at temperatures ranging from 250/sup 0/C to 620/sup 0/C. An exponential decay of the trap density with annealing time has been observed. The curve of the equilibrium value of trap density obtained after long annealing times versus temperature shows a U-shaped form with a minimum located near 450/sup 0/C. A model based on the bimolecular reaction theory is proposed to explain the obtained results.
- Research Organization:
- Fraunhofer Arbeitsgruppe fur Integrierte Schaltungen, Artilleriestrasse 12, D-8520 Erlangen (DE)
- OSTI ID:
- 6718941
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. 35:5; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360603 -- Materials-- Properties
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALLOYS
ALUMINIUM ADDITIONS
ALUMINIUM ALLOYS
ANNEALING
CAPACITANCE
CAPACITORS
CHALCOGENIDES
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
EQUIPMENT
HEAT TREATMENTS
HIGH TEMPERATURE
MATHEMATICAL MODELS
OXIDES
OXYGEN COMPOUNDS
PARTICLE MODELS
PHYSICAL PROPERTIES
SILICON COMPOUNDS
SILICON OXIDES
STATISTICAL MODELS
THERMODYNAMIC MODEL
360603 -- Materials-- Properties
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALLOYS
ALUMINIUM ADDITIONS
ALUMINIUM ALLOYS
ANNEALING
CAPACITANCE
CAPACITORS
CHALCOGENIDES
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
EQUIPMENT
HEAT TREATMENTS
HIGH TEMPERATURE
MATHEMATICAL MODELS
OXIDES
OXYGEN COMPOUNDS
PARTICLE MODELS
PHYSICAL PROPERTIES
SILICON COMPOUNDS
SILICON OXIDES
STATISTICAL MODELS
THERMODYNAMIC MODEL