The nonproportionality of interface-trap generation to hole trapping efficiency in metal-oxide-silicon devices

Journal Article · Thu Aug 01 04:00:00 EDT 1991 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.349502· OSTI ID:5481588

Chen, I C; Wei, C C; Teng, C W ^[1]

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1. Semiconductor Process and Design Center, Texas Instruments, P.O. Box 655012, M/S 944, Dallas, Texas 75265 (USA)

The susceptibility to hole trapping of the gate oxide of a metal-oxide-silicon (MOS) device is {ital not} necessarily proportional to the efficiency of interface trap generation at the Si-SiO{sub 2} interface, which is widely believed due to the recombination of electrons and trapped holes in the oxide close to the interface. In this study, an oxide given a high-temperature (1000 {degree}C) anneal, which increases the hole trapping efficiency of the oxide, is shown to have much less generated interface traps compared to a normal oxide (without high-temperature annealing) upon exposing to ionizing radiation with subsequent electron injection, or high-field injection alone. Under high-field tunneling injection, the electron fluence required to create a certain density of interface trap is an order of magnitude higher for the annealed oxide compared to the normal oxide. These results could provide a possible direction for improving the reliability of the gate oxide of a MOS field-effect transistor.

• OSTI ID: 5481588
• Journal Information: Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 70:3; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
CAPACITORS
EFFICIENCY
ELECTRICAL EQUIPMENT
ELECTROMAGNETIC RADIATION
ELEMENTS
EQUIPMENT
FIELD EFFECT TRANSISTORS
GAMMA RADIATION
HEAT TREATMENTS
HOLES
INTERFACES
IONIZING RADIATIONS
MOS TRANSISTORS
MOSFET
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
TRANSISTORS
TRAPPING
TRAPS
VERY HIGH TEMPERATURE