Chemistry of Si-SiO/sub 2/ interface trap annealing

Journal Article · Wed Jun 15 04:00:00 EDT 1988 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.340317· OSTI ID:5185019

Reed, M L; Plummer, J D

The kinetics and chemistry of Si-SiO/sub 2/ interface trap annealing are examined in detail. Measurements of interface trap density D/sub it/ as a function of anneal time were performed with several process variables as parameters: oxide thickness, anneal ambient, temperature, bulk carrier type, metallization damage, and orientation. Experiments were carried out using rapid thermal processing and capacitance-voltage measurements of aluminum gate metal-oxide-semiconductor capacitors. Anneal temperature and crystal orientation have the strongest effect on the kinetics. <100> interfaces can be described by a power-law temporal variation; <111> kinetics are slightly more complicated. In both cases the experimentally observed anneal behavior is in conflict with the commonly used second-order surface recombination model. We propose a two-reaction model involving atomic hydrogen dimerization and hydrogeninterface trap reactions. This model sucessfully predicts anneal kinetics over a temperature range of 170--500 /sup 0/C, representing a 10/sup 6/ dynamic range in anneal rates. The difference in anneal behavior between <111> and <100> interfaces is explained by postulating different trap anneal mechanisms for the P/sub b//sub 0/ and P/sub b//sub 1/ defect centers. This hypothesis is supported by trap production kinetics induced by extended anneals

• Research Organization: Center for Integrated Systems, Stanford University, Stanford, California 94305-4070
• OSTI ID: 5185019
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 63:12; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure &amp; Phase Studies
ANNEALING
CHALCOGENIDES
CHEMICAL REACTION KINETICS
DATA
ELEMENTS
EXPERIMENTAL DATA
HEAT TREATMENTS
HIGH TEMPERATURE
INFORMATION
INTERFACES
KINETICS
MATHEMATICAL MODELS
NUMERICAL DATA
OXIDES
OXYGEN COMPOUNDS
REACTION KINETICS
SEMICONDUCTOR DEVICES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
TEMPERATURE DEPENDENCE
TRAPPING