Links between oxide, interface, and border traps in high-temperature annealed Si/SiO[sub 2] systems

Journal Article · Mon Jun 20 04:00:00 EDT 1994 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.111943· OSTI ID:7300842

Warren, W L; Fleetwood, D M; Shaneyfelt, M R; Schwank, J R; Winokur, P S ^[1]; Devine, R A.B.; Mathiot, D ^[2]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-1349 (United States)
2. France Telecom, CNET, 38243 Meylan (France)

Evidence is provided to show that enhanced hole-, interface-, and border-trap generation in irradiated high-temperature annealed Si/SiO[sub 2]/Si systems are all related either directly, or indirectly, to the presence of oxygen vacancies. We find that the calculated oxygen vacancy due to high-temperature anneals from 800 to 950 [degree]C in metal-oxide-semiconductor capacitors closely matches the radiation-induced oxide-trapped charge. This strongly suggests that oxygen vacancies (or vacancy-related complexes) are the dominant hole trapping sites in this particular case. Along with the increase in radiation-induced oxide-trap charge, we observe a concomitant increase in the interface- and border-trap densities. This suggests that in devices that receive high-temperature anneals, all these phenomena are linked to the existence of oxygen vacancies either directly, or indirectly, perhaps via hole trapping at these vacancies.

• DOE Contract Number: AC04-94AL85000
• OSTI ID: 7300842
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 64:25; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605 -- Materials-- Radiation Effects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
CHALCOGENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELEMENTS
HEAT TREATMENTS
HOLES
JUNCTIONS
OXIDES
OXYGEN COMPOUNDS
POINT DEFECTS
RADIATION EFFECTS
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON OXIDES
TEMPERATURE RANGE
TEMPERATURE RANGE 1000-4000 K
TRAPPING
VACANCIES