Selectively doped double-heterojunction lateral current injection ridge waveguide AlGaAs/GaAs laser

Journal Article · Mon Apr 09 00:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102477· OSTI ID:7120740

Yasuhira, N; Suemune, I; Kan, Y; Yamanishi, M ^[1]

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1. Faculty of Engineering, Hiroshima University, Shitami, Saijocho, Higashihiroshima 724, Japan (JP)

A new type of laser structure which utilizes the selectively doped double-heterojunction (SDH) structure for lateral current injection (LCI) was proposed. A ridge waveguide AlGaAs/GaAs laser based on the SDH-LCI scheme was demonstrated to lase at the very low threshold current of 11.5 mA. The compatibility of this new laser structure with electronic devices is discussed.

• OSTI ID: 7120740
• Journal Information: Applied Physics Letters; (USA), Vol. 56:15; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
DESIGN
ALUMINIUM ARSENIDES
ELECTRICAL PUMPING
FABRICATION
GALLIUM ARSENIDES
THRESHOLD CURRENT
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
ELECTRIC CURRENTS
GALLIUM COMPOUNDS
LASERS
PNICTIDES
PUMPING
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
426002* - Engineering- Lasers & Masers- (1990-)