Selectively doped double-heterojunction lateral current injection ridge waveguide AlGaAs/GaAs laser

Journal Article · Mon Apr 09 04:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.102477· OSTI ID:7120740

Yasuhira, N; Suemune, I; Kan, Y; Yamanishi, M ^[1]

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1. Faculty of Engineering, Hiroshima University, Shitami, Saijocho, Higashihiroshima 724, Japan (JP)

A new type of laser structure which utilizes the selectively doped double-heterojunction (SDH) structure for lateral current injection (LCI) was proposed. A ridge waveguide AlGaAs/GaAs laser based on the SDH-LCI scheme was demonstrated to lase at the very low threshold current of 11.5 mA. The compatibility of this new laser structure with electronic devices is discussed.

• OSTI ID: 7120740
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 56:15; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DESIGN
ELECTRIC CURRENTS
ELECTRICAL PUMPING
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
PNICTIDES
PUMPING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
THRESHOLD CURRENT