Reduced optical waveguide losses of a partially disordered GaAs/AlGaAs single quantum well laser structure for photonic integrated circuits

Journal Article · Mon Oct 31 04:00:00 EST 1988 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.99799· OSTI ID:6808570

Werner, J; Kapon, E; Von Lehmen, A C; Bhat, R; Colas, E; Stoffel, N G; Schwarz, S A

We present TE and TM waveguide loss measurements of partially disordered GaAs/AlGaAs quantum well separate confinement laser structures. Disordering is accomplished by silicon ion implanation and subsequent annealing. Propagation losses as low as 9 cm/sup -1/ are observed at the lasing wavelength of the corresponding untreated laser wafer. The waveguides are shown to be compatible with fabrication and dimensional requirements of high quality semiconductor lasers; ridge waveguide lasers fabricated in unimplanted portions of the same wafer exhibit threshold currents of only 8 mA. The results show that impurity-induced quantum well disordering is suitable for monolithic integration of low-threshold quantum well lasers and transparent optical waveguides.

• Research Organization: Bell Communications Research, Red Bank, New Jersey 07701
• OSTI ID: 6808570
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:18; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
CHARGED PARTICLES
CURRENTS
DATA
ELECTRIC CURRENTS
ELECTRONIC CIRCUITS
ENERGY LOSSES
EXPERIMENTAL DATA
FABRICATION
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
IMPURITIES
INFORMATION
INTEGRATED CIRCUITS
ION IMPLANTATION
IONS
LASERS
LOSSES
MICROELECTRONIC CIRCUITS
NUMERICAL DATA
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SILICON IONS
THIN FILMS
THRESHOLD CURRENT
WAVE PROPAGATION
WAVEGUIDES