Ridge waveguide AlGaAs/GaAs distributed feedback lasers with multiple quantum well structure

Journal Article · Mon Jun 30 00:00:00 EDT 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96779· OSTI ID:5657350

Noda, S; Kojima, K; Mitsunaga, K; Kyuma, K; Hamanaka, K; Nakayama, T

Ridge waveguide AlGaAs/GaAs distributed feedback lasers with multiple quantum well structure were fabricated for the first time. The threshold current of 28 mA, which is the lowest ever reported among AlGaAs/GaAs distributed feedback lasers, was obtained at room temperature. Stable single longitudinal and transverse mode oscillation was observed over the wide temperature range. The dynamic linewidth was also measured and it was five to six times smaller than that of a double heterostructure distributed feedback laser.

• Research Organization: Mitsubishi Electric Corporation, Central Research Laboratory, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661, Japan
• OSTI ID: 5657350
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 48:26; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
EXPERIMENTAL DATA
FABRICATION
FEEDBACK
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
LINE WIDTHS
NUMERICAL DATA
OSCILLATION MODES
PERFORMANCE
PNICTIDES
RESOLUTION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SPATIAL RESOLUTION
THRESHOLD CURRENT