Ridge waveguide AlGaAs/GaAs distributed feedback lasers

Journal Article · Sun Feb 01 04:00:00 EST 1987 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1987.1073306· OSTI ID:7040908

Noda, S; Kojima, K; Mitsunaga, K; Kyuma, K; Hamanaka, K; Nakayama, T

Ridge waveguide AlGaAs/GaAs distributed feedback lasers were fabricated by a two-step molecular beam epitaxy. A threshold current as low as 37 mA, which is the lowest ever reported, was obtained under a continuous wave condition at room temperature. The low threshold current is due to the larger coupling coefficient (9l cm/sup -1/) and a good current and optical confinement. The effects of the facet coatings were investigated and a high-power and a high-temperature operation was obtained. The polarization and the dynamic behavior were also investigated.

• Research Organization: Central Research Lab., Mitsubishi Electric Corp., Amagasaki, Hyogo, 661
• OSTI ID: 7040908
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-23:2; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMBIENT TEMPERATURE
ARSENIC COMPOUNDS
ARSENIDES
COATINGS
COUPLING
CURRENTS
DYNAMICS
ELECTRIC CURRENTS
EPITAXY
FABRICATION
FEEDBACK
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
MECHANICS
MOLECULAR BEAM EPITAXY
PNICTIDES
POLARIZATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THRESHOLD CURRENT
WAVEGUIDES