Low threshold current AlGaAs/GaAs rib-waveguide separate-confinement-heterostructure distributed-feedback lasers grown by metalorganic chemical vapor deposition

Journal Article · Mon Jun 01 00:00:00 EDT 1987 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1987.1073413· OSTI ID:6361959

Honda, K; Hirata, S; Ohata, T; Hornii, S; Kojima, C

AlGaAs/GaAs rib-waveguide separate-confinement-heterostructure (SCH) distributed-feedback (DFB) lasers emitting at 880 nm were fabricated by a two-step atmospheric pressure metalorganic chemical vapor deposition (MOCVD) growth technique. A CW threshold current as low as 18 mA and an output power of more than 10 mW per facet at room temperature was obtained. Also, single longitudinal and fundamental transverse modes were maintained up to more than twice the threshold current level.

• Research Organization: Sony Corp. Research Center, Yokohama
• OSTI ID: 6361959
• Journal Information: IEEE J. Quant. Electron.; (United States), Vol. QE-23:6
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ALUMINIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
GALLIUM ARSENIDES
SEMICONDUCTOR LASERS
FABRICATION
THRESHOLD CURRENT
WAVEGUIDES
AMBIENT TEMPERATURE
ATMOSPHERIC PRESSURE
FEEDBACK
POWER GENERATION
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CURRENTS
DEPOSITION
ELECTRIC CURRENTS
GALLIUM COMPOUNDS
LASERS
PNICTIDES
SEMICONDUCTOR DEVICES
SURFACE COATING
420300* - Engineering- Lasers- (-1989)