High-peak-power low-threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration-enhanced molecular beam epitaxy
A high-peak-power low-threshold AlGaAs/GaAs double-heterostructure stripe laser diode on Si substrates grown by hybrid migration-enhanced molecular beam epitaxy (MEMBE) and metalorganic chemical vapor deposition (MOCVD) has been demonstrated for the first time. These devices showed the highest peak powers of up to 184 mW per facet reported so far for double-heterostructure stripe laser diodes on Si substrates, room-temperature pulsed threshold currents as low as 150 mA, and differential quantum efficiencies as high as 30% without mirror facet coating. An intrinsic threshold current density has been estimated to be about 2 kA/cm/sup 2/ when taking current spreading and lateral diffusion effects into account. Low dislocation density shows that MEMBE can be a useful method to grow high quality GaAs and AlGaAs/GaAs layers on Si substrates by combining with MOCVD.
- Research Organization:
- Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109
- OSTI ID:
- 6928803
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:14; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360601 -- Other Materials-- Preparation & Manufacture
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CURRENTS
DEPOSITION
EFFICIENCY
ELECTRIC CURRENTS
ELEMENTS
EPITAXY
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
MOLECULAR BEAM EPITAXY
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
SUBSTRATES
SURFACE COATING
THRESHOLD CURRENT