Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition

Journal Article · Sun Feb 09 23:00:00 EST 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96515· OSTI ID:6192956

Sakai, S; Soga, T; Takeyasu, M; Umeno, M

AlGaAs/GaAs double heterostructure laser diodes have been fabricated on Si substrates using GaP/(GaP/GaAsP) superlattice/(GaAsP/GaAs) superlattice intermediate layers grown by metalorganic chemical vapor deposition. A threshold current density at 16.5 C and a characteristic temperature T0 of 4.9 kA/cmS and 179 K respectively have been obtained for the diode on Si substrate.

• Research Organization: Department of Electronic and Computer Engineering, Nagoya Institute of Technology, Gokiso-Cho, Showa-ku, Nagoya 466, Japan
• OSTI ID: 6192956
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 48:6; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COATINGS
CURRENT DENSITY
CURRENTS
DATA
DEPOSITION
ELECTRIC CURRENTS
ELEMENTS
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
OPERATION
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
SUPERLATTICES
SURFACE COATING
TEMPERATURE EFFECTS
THRESHOLD CURRENT
VAPOR DEPOSITED COATINGS