Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition

Journal Article · Mon Feb 10 00:00:00 EST 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96515· OSTI ID:6192956

Sakai, S; Soga, T; Takeyasu, M; Umeno, M

AlGaAs/GaAs double heterostructure laser diodes have been fabricated on Si substrates using GaP/(GaP/GaAsP) superlattice/(GaAsP/GaAs) superlattice intermediate layers grown by metalorganic chemical vapor deposition. A threshold current density at 16.5 C and a characteristic temperature T0 of 4.9 kA/cmS and 179 K respectively have been obtained for the diode on Si substrate.

• Research Organization: Department of Electronic and Computer Engineering, Nagoya Institute of Technology, Gokiso-Cho, Showa-ku, Nagoya 466, Japan
• OSTI ID: 6192956
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 48:6
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
GALLIUM ARSENIDES
CHEMICAL VAPOR DEPOSITION
GALLIUM PHOSPHIDES
SEMICONDUCTOR LASERS
FABRICATION
OPERATION
SILICON
VAPOR DEPOSITED COATINGS
SUPERLATTICES
CURRENT DENSITY
EXPERIMENTAL DATA
HETEROJUNCTIONS
TEMPERATURE EFFECTS
THRESHOLD CURRENT
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
COATINGS
CURRENTS
DATA
DEPOSITION
ELECTRIC CURRENTS
ELEMENTS
GALLIUM COMPOUNDS
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SURFACE COATING
420300* - Engineering- Lasers- (-1989)