GaAs/AlGaAs double-heterojunction lateral p-i-n ridge waveguide laser

Journal Article · Wed Sep 01 00:00:00 EDT 1993 · Optical Engineering; (United States)

DOI:https://doi.org/10.1117/12.143947· OSTI ID:5708547

Tan, G L; Xu, J M ^[1]; Shur, M ^[2]

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1. Univ. of Toronto, Toronto (Canada). Dept. of Electrical engineering
2. Univ. of Virginia, Charlottesville, VA (United States). Dept. of Electrical Engineering

A new type of double-heterojunction lateral current injection GaAs/AlGaAs p-i-n ridge waveguide laser is described. The device employs intrinsic materials in the active region to reduce the parasites in the laser, thereby lowering the required threshold current and increasing the quantum efficiency of the device. The use of ridge waveguide structure provides better optical confinement than the conventional lateral injection lasers and avoids the regrowth required for buried heterostructure transverse junction stripe (TJS) lasers. Two-dimensional self-consistent simulations have been carried out, using the authors finite-element light emitter simulator (FELES), for the purpose of proof of concept and evaluation of the device operation and performance. The results show that the device has a low threshold current, a good differential efficiency, a low capacitance (0.028 pF at zero bias), and a low dynamic resistance ([lt]2.3 [Omega]).

• OSTI ID: 5708547
• Journal Information: Optical Engineering; (United States), Vol. 32:9; ISSN 0091-3286
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
COMPUTERIZED SIMULATION
DESIGN
ALUMINIUM ARSENIDES
GALLIUM ARSENIDES
HETEROJUNCTIONS
LASER MATERIALS
OPERATION
PERFORMANCE
THRESHOLD CURRENT
WAVEGUIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
ELECTRIC CURRENTS
GALLIUM COMPOUNDS
JUNCTIONS
LASERS
MATERIALS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SIMULATION
SOLID STATE LASERS
426002* - Engineering- Lasers & Masers- (1990-)