Long-term annealing study of midgap interface-trap charge neutrality

Journal Article · Mon Jun 08 00:00:00 EDT 1992 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.106807· OSTI ID:7113591

Fleetwood, D M ^[1]

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1. Sandia National Laboratories, Department 1332, Albuquerque, New Mexico 87185-5800 (United States)

Non-radiation-hardened metal-oxide-semiconductor (MOS) devices were irradiated to doses from 30 to 90 krad(SiO{sub 2}) and baked at 100 {degree}C under positive bias for 2.75 yr. Threshold-voltage shifts due to radiation-induced oxide- and interface-trap charge were estimated via the subthreshold current-voltage technique of McWhorter and Winokur (Appl. Phys. Lett. {bold 48}, 133 (1986)), which depends on the assumption that radiation-induced interface traps are neutral at midgap surface potential. The oxide-trap charge inferred via this technique asymptotically approached zero {similar to}9 months after irradiation and remained constant for the next 2 yr, despite large changes in the subthreshold current-voltage characteristics caused by changes in interface-trap density (which increased during the first 4--9 months of 100 {degree}C annealing, then decreased during the remaining 2--2.5 yr). This strongly reinforces the often controversial idea that radiation-induced interface traps are charge-neutral at midgap. Finally, a new figure of merit is developed to assess the self-consistency of interface-trap charge measurements on irradiated MOS devices.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 7113591
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 60:23; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

665000* -- Physics of Condensed Matter-- (1992-)
665300 -- Interactions Between Beams & Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CHARGE STATE
DEFECTS
ELECTROMAGNETIC RADIATION
GAMMA RADIATION
HEAT TREATMENTS
INTERFACES
IONIZING RADIATIONS
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
TRANSISTORS
TRAPS