Charge separation technique for metal-oxide-silicon capacitors in the presence of hydrogen deactivated dopants

Journal Article · Thu Jun 01 04:00:00 EDT 2000 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.373522· OSTI ID:20216374

Witczak, Steven C ^[1]; Winokur, Peter S ^[1]; Lacoe, Ronald C ^[2]; Mayer, Donald C ^[2]

---

1. Sandia National Laboratories, P.O. Box 5800, MS-1083, Albuquerque, New Mexico 87185-1083 (United States)
2. The Aerospace Corporation, P.O. Box 92957, M2-244, Los Angeles, California 90009-2957 (United States)

An improved charge separation technique for metal-oxide-silicon (MOS) capacitors is presented which accounts for the deactivation of substrate dopants by hydrogen at elevated irradiation temperatures or small irradiation biases. Using high-frequency capacitance-voltage measurements, radiation-induced inversion voltage shifts are separated into components due to oxide trapped charge, interface traps, and deactivated dopants, where the latter is computed from a reduction in Si capacitance. In the limit of no radiation-induced dopant deactivation, this approach reduces to the standard midgap charge separation technique used widely for the analysis of room-temperature irradiations. The technique is demonstrated on a p-type MOS capacitor irradiated with {sup 60}Co {gamma} rays at 100 degree sign C and zero bias, where the dopant deactivation is significant.(c) 2000 American Institute of Physics.

• OSTI ID: 20216374
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 87; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BORON ADDITIONS
CAPACITORS
CHARGE STATES
DOPED MATERIALS
EXPERIMENTAL DATA
GAMMA RADIATION
HYDROGEN
MOS TRANSISTORS
RADIATION EFFECTS
SILICON