New surface atomic structures for column V overlayers on the (110) surfaces of III-V compound semiconductors

Conference · Wed Jan 31 23:00:00 EST 1990

DOI:https://doi.org/10.1116/1.584983· OSTI ID:7108729

LaFemina, J P ^[1]; Duke, C B ^[2]; Mailhiot, C ^[3]

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1. Pacific Northwest Lab., Richland, WA (USA)
2. Xerox Corp., Webster, NY (USA). Webster Research Center
3. Lawrence Livermore National Lab., CA (USA)

Two new minimum-energy surface structures have been identified for p(1 {times} 1) overlayers of Sb on the (110) surface of III-V compound semiconductors using a tight-binding total-energy formalism previously developed for these systems. The first is the commensurate chain'' structure in which Sb zig-zag chains are commensurate with, and on top of, the Ga--As unreconstructed surface zig-zag chains. This structure differs from the previously found epitaxial-chain structure by virtue of the registry of the Sb chains on top of'' rather than in between'' the substrate Ga--As chains. Like the epitaxial chain structure, it is compatible with both scanning tunneling microscopy (STM) and photoemission data. The second is an overlapping chain'' structure in which the Sb chains are 180{degree} out-of-phase with, and on top of, the Ga--As substrate chains. This structure is, however, incompatible with both low-energy-electron-diffraction and STM data for GaAs(110)-p(1 {times} 1)-Sb although it may be a possible structure for other systems. Computations for GaP(110)-p(1 {times} 1)-Sb and InSb(110)- p(1 {times} 1)-Sb reveal that the energy difference between the commensurate chain and traditional epitaxial structure is approximately constant over this range of overlayer/substrate lattice mismatch. 16 ref., 8 figs., 3 tabs.

• Research Organization: Lawrence Livermore National Lab., CA (USA)
• Sponsoring Organization: DOE/DP
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 7108729
• Report Number(s): UCRL-JC-103212; CONF-900123--1; ON: DE90009003
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ADSORPTION
ANTIMONY
ARSENIC COMPOUNDS
ARSENIDES
BONDING
COMPARATIVE EVALUATIONS
DATA COVARIANCES
ELEMENTS
ENERGY MODELS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
IMAGES
INTERACTIONS
INTERFACES
JOINING
LAYERS
METALS
MICROSCOPY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RELAXATION
SEMICONDUCTOR DEVICES
SORPTION
STRUCTURAL MODELS